UJN1205Z
Features
Low On-Resistance RDS(on)max of 0.045W Voltage controlled Maximum operating temperature of 175°C Extremely fast switching not dependent on temperature Low gate charge Low intrinsic capacitance x J Si C Series...
45m W
- 1200V Si C Normally-On JFET...
UJN1205Z Die Form...
Source Pad
Typical Applications
Over Current Protection Circuits DC-AC Inverters Switch Mode Power Supplies Power Factor Correction Modules Motor Drives Induction Heating
Part Number UJN1205Z
Gate Pad
Package Die
Descriptions
United Silicon Carbide, Inc offers the x J series of high-performance Si C normally-on JFET transistors. This series exhibits ultra-low on resistance (RDS(ON)) and gate charge (Qg) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS(ON) at VGS = 0 V is also ideal for current protection circuits without the need for active control, as well as for cascode operation.
Absolute Maximum Ratings
Parameter Drain-Source Voltage
Gate-Source...
