UnitedSiC UJN1205Z
1200V SiC Normally-On JFET
FEATURES
Low On-Resistance RDS(on)max of 0.045W Voltage controlled Maximum operating temperature of 175°C Extremely fast switching not dependent on temperature Low gate charge Low intrinsic capacitance xJ SiC Series... 45mW - 1200V SiC Normally-On JFET... UJN1205Z Die Form... Source Pad TypicalAPPLICATIONS
Over Current Protection Circuits DC-AC Inverters Switch Mode Power Supplies Power Factor Correction Modules Motor Drives Induction Heating Part Number UJN1205Z Gate Pad Package Die Descriptions United Silicon Carbide, Inc offers the xJ series of high-performance SiC normally-on JFET transistors. This series exhibits ultra-low on resistance (RDS(ON)) and gate charge (Qg) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS(ON) at VGS = 0 V is also ideal for current protection circuits without the need for active control, as well as for cascode operation.ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Continuo...