UJN1205Z - 1200V SiC Normally-On JFET

Datasheet Summary

Description

United Silicon Carbide, Inc offers the xJ series of high-performance SiC normally-on JFET transistors.

This series exhibits ultra-low on resistance (RDS(ON)) and gate charge (Qg) allowing for low conduction and switching loss.

Features

Low On-Resistance RDS(on)max of 0.045W Voltage controlled Maximum operating temperature of 175°C Extremely fast switching not dependent on temperature Low gate charge Low intrinsic capacitance xJ SiC Series 45mW - 1200V SiC Normally-On JFET UJN1205Z Die Form Source Pad Typical.

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Datasheet Details

Part number	UJN1205Z
Manufacturer	UnitedSiC
File Size	389.66 KB
Description	1200V SiC Normally-On JFET
Datasheet	UJN1205Z Datasheet
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Features Low On-Resistance RDS(on)max of 0.045W Voltage controlled Maximum operating temperature of 175°C Extremely fast switching not dependent on temperature Low gate charge Low intrinsic capacitance xJ SiC Series... 45mW - 1200V SiC Normally-On JFET... UJN1205Z Die Form... Source Pad Typical Applications Over Current Protection Circuits DC-AC Inverters Switch Mode Power Supplies Power Factor Correction Modules Motor Drives Induction Heating Part Number UJN1205Z Gate Pad Package Die Descriptions United Silicon Carbide, Inc offers the xJ series of high-performance SiC normally-on JFET transistors. This series exhibits ultra-low on resistance (RDS(ON)) and gate charge (Qg) allowing for low conduction and switching loss.

Published: Nov 14, 2025 |