UJN1208K
Description
United Silicon Carbide, Inc offers the x J series of high-performance Si C normally-on JFET transistors. This series exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS(ON) at VGS = 0 V is also ideal for current protection circuits without the need for active control, as well as for cascode operation.
CASE G (1)
CASE D (2)
12 3
Part Number UJN1208K
S (3)
Package TO-247-3L
Marking UJN1208K
Features w Low On-Resistance RDS(on)max of 0.080W w Voltage controlled w Maximum operating temperature of 175°C w Extremely fast switching not dependent on temperature w Low gate charge w Low intrinsic capacitance w Ro HS pliant
Typical Applications w Over Current Protection Circuits w DC-AC Inverters w Switch Mode Power Supplies w Power Factor Correction Modules w Motor Drives w Induction Heating
Maximum Ratings
Parameter
Symbol
Test Conditions
Drain-source voltage...
