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MIE-134A1-02 - GaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE

Datasheet Summary

Description

The MIE-134A1-02 is a GaAs infrared emitting diode molded in clear, lensed side looking package.

The MIE-134A1-02 provides a broad range of intensity selection .

0.80±0.

Features

  • Mechanically and spectrally matched to The MID-13A45 of phototransistor . 1.25 (.049) 1.25 (.049) Pin # 1 2 3 Name Cathode Open Anode 1 2 3 NOTES : 1. All dimensions are in millimeters. (inches). 2. Tolerance is ± 0.25mm (.010") unless otherwise noted . 3. Lead spacing is measured where the leads emerge from the package. Absolute Maximum Ratings @ TA=25oC Parameter Power Dissipation Peak Forward Current Continuos Forward Current Reverse Voltage Operating Temperature Range Storage Temperatu.

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Datasheet Details

Part number MIE-134A1-02
Manufacturer Unity Opto Technology
File Size 38.13 KB
Description GaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE
Datasheet download datasheet MIE-134A1-02 Datasheet
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GaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE Description The MIE-134A1-02 is a GaAs infrared emitting diode molded in clear, lensed side looking package. The MIE-134A1-02 provides a broad range of intensity selection . 1.70 ± 0.10 (.067±.004) 0.30max (.012) 0.50max (.020) MIE-134A1-02 Unit: mm( inches ) Package Dimensions 4.00±0.10 (.158±.004) 0.80±0.10 (.032±.004) 2.05 (.081) 2.00±0.10 (.078±.004) 2.45±0.10 (.080±.004) 2.00max (.078) 3.70±0.10 (.146±.004) 4.00 ± 0.10 (.158±.004) R1.1 2.00±0.10 (.078±.004) 3.09±0.10 (.154±.004) 3.00*0.5 (.118) 5.10±0.10 (.200±.004) 2.50±0.30 (.099±.012) l Selected to specific on-line intensity and radiant intensity ranges l l Low cost, plastic side looking package 1 2 3 9.10 (.358) 7.10 (.
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