MIE-134A1-02 Datasheet Text
GaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE
Description
The MIE-134A1-02 is a GaAs infrared emitting diode molded in clear, lensed side looking package. The MIE-134A1-02 provides a broad range of intensity selection .
1.70 ± 0.10 (.067±.004) 0.30max (.012) 0.50max (.020)
MIE-134A1-02
Unit: mm( inches )
Package Dimensions
4.00±0.10 (.158±.004)
0.80±0.10 (.032±.004)
2.05 (.081)
2.00±0.10 (.078±.004) 2.45±0.10 (.080±.004)
2.00max (.078)
3.70±0.10 (.146±.004)
4.00 ± 0.10 (.158±.004)
R1.1 2.00±0.10 (.078±.004) 3.09±0.10 (.154±.004) 3.00- 0.5 (.118) 5.10±0.10 (.200±.004) 2.50±0.30 (.099±.012) l
Selected to specific on-line intensity and radiant intensity ranges l l
Low cost, plastic side looking package
1 2 3
9.10 (.358)
7.10 (.280)
Features
Mechanically and spectrally matched to The MID-13A45 of phototransistor .
1.25 (.049)
1.25 (.049)
Pin # 1 2 3
Name Cathode Open Anode 1 2 3
NOTES : 1. All dimensions are in millimeters.(inches). 2. Tolerance is ± 0.25mm (.010") unless otherwise noted . 3. Lead spacing is measured where the leads emerge from the...