The MIE-184A4 is a high power infrared eimtting diode in GaAs technology with AlGaAs window coating molded in water clear plastic package.
Features
l l l l l
3.00 (.118)
High radiant power and high radiant intensity Suitable for DC and high pulse current operation Special 1.8mm package, radiation angle: 35° Peak wavelength λp = 940 nm Good spectral matching to Si-Photodetector
0.50 TYP. (.020) SEE NOTE 2
25.40MIN. (1.000)
1.00MIN.
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MIE-114A1- GaAlAs/GaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE
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MIE-114L3- GaAlAs SIDE LOOK PACKAGE INFRARED EMITTING DIODE
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GaAlAs/GaAs 1.8mm PACKAGE INFRARED EMITTING DIODE
Description
The MIE-184A4 is a high power infrared eimtting diode in GaAs technology with AlGaAs window coating molded in water clear plastic package.
R 1.70 (.067) φ1.80 (.071) 2.40 (.094)
MIE-184A4
Package Dimensions
Unit : mm (inches )
3.30 (.130) 1.40 (.055) 1.60 (.063)
Features
l l l l l
3.00 (.118)
High radiant power and high radiant intensity Suitable for DC and high pulse current operation Special 1.8mm package, radiation angle: 35° Peak wavelength λp = 940 nm Good spectral matching to Si-Photodetector
0.50 TYP. (.020) SEE NOTE 2
25.40MIN. (1.000)
1.00MIN .
Application
A l l
2.54 NOM. (.100)
SEE NOTE 3
C
Data communication SIR
Notes : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2.
MIE-184A4 Datasheet
