Datasheet4U Logo Datasheet4U.com

MIE-184A4 - GaAlAs/GaAs 1.8mm PACKAGE INFRARED EMITTING DIODE

General Description

The MIE-184A4 is a high power infrared eimtting diode in GaAs technology with AlGaAs window coating molded in water clear plastic package.

Key Features

  • l l l l l 3.00 (.118) High radiant power and high radiant intensity Suitable for DC and high pulse current operation Special 1.8mm package, radiation angle: 35° Peak wavelength λp = 940 nm Good spectral matching to Si-Photodetector 0.50 TYP. (.020) SEE NOTE 2 25.40MIN. (1.000) 1.00MIN.

📥 Download Datasheet

Datasheet Details

Part number MIE-184A4
Manufacturer Unity Opto Technology
File Size 32.25 KB
Description GaAlAs/GaAs 1.8mm PACKAGE INFRARED EMITTING DIODE
Datasheet download datasheet MIE-184A4 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MIE05W0505BGYE Isolated DC/DC Module MPS
MIE05W0505BGYE-3R Isolated DC/DC Module MPS
MIE1W0505BGLVH 2.5kVrms Isolated DC-DC Module MPS
MIEB100W1200DPFTEH SPT+IGBT IXYS

Other Datasheets by Unity Opto Technology

Part Number Description
MIE-184H4 GaAlAs 1.8mm PACKAGE INFRARED EMITTING DIODE
MIE-111A1 AlGaAs/GaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE
MIE-114A1 GaAlAs/GaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE
MIE-114A2 GaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE
MIE-114G1 GaAs SIDE LOOK PACKAGE INFRARED EMITTING DIODE

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
GaAlAs/GaAs 1.8mm PACKAGE INFRARED EMITTING DIODE Description The MIE-184A4 is a high power infrared eimtting diode in GaAs technology with AlGaAs window coating molded in water clear plastic package. R 1.70 (.067) φ1.80 (.071) 2.40 (.094) MIE-184A4 Package Dimensions Unit : mm (inches ) 3.30 (.130) 1.40 (.055) 1.60 (.063) Features l l l l l 3.00 (.118) High radiant power and high radiant intensity Suitable for DC and high pulse current operation Special 1.8mm package, radiation angle: 35° Peak wavelength λp = 940 nm Good spectral matching to Si-Photodetector 0.50 TYP. (.020) SEE NOTE 2 25.40MIN. (1.000) 1.00MIN . Application A l l 2.54 NOM. (.100) SEE NOTE 3 C Data communication SIR Notes : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2.