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MIE-384A4 - AlGaAs/GaAs T-1 PACKAGE INFRARED EMITTING DIODE

Datasheet Summary

Description

The MIE-384A4 is an infrared emitting diode utilizing GaAs with AlGaAs window coating chip technology.

It is molded in water clear plastic package.

Features

  • l l l l l l 23.40MIN. (.920) High radiant power and high radiant intensity Suitable for DC and high pulse current operation Special T-1 ( φ 3mm ) package Peak wavelength λp = 940 nm Good spectral matching to si-photodetector Radiant angle : ±14° A 2.54 (.100) C .50 TYP. (.020) 1.00MIN. (.040) Notes : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 0.4 mm (.0157") max. 3. Lead spacing is measured where the leads emerge from the package. Absolute Ma.

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Datasheet Details

Part number MIE-384A4
Manufacturer Unity Opto Technology
File Size 30.64 KB
Description AlGaAs/GaAs T-1 PACKAGE INFRARED EMITTING DIODE
Datasheet download datasheet MIE-384A4 Datasheet
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AlGaAs/GaAs T-1 PACKAGE INFRARED EMITTING DIODE Description The MIE-384A4 is an infrared emitting diode utilizing GaAs with AlGaAs window coating chip technology. It is molded in water clear plastic package. 4.6±0.30 (.181) 3.1±0.20 (.122) MIE-384A4 Unit : mm (inches ) Package Dimensions 5.7 5.7 2.5 (.224) 2.5 (.10) SEE NOTE 2 Features l l l l l l 23.40MIN. (.920) High radiant power and high radiant intensity Suitable for DC and high pulse current operation Special T-1 ( φ 3mm ) package Peak wavelength λp = 940 nm Good spectral matching to si-photodetector Radiant angle : ±14° A 2.54 (.100) C .50 TYP. (.020) 1.00MIN. (.040) Notes : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 0.4 mm (.0157") max. 3.
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