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MIE-404L3 - GaAlAs HIGH POWER T0-46 PACKAGE INFRARED EMITTING DIODE

General Description

The MIE-404L3 is an infrared emitting diode with GaAlAs / GaAlAs die technology molded in a water clear plastic package.

Key Features

  • l l l l 25.00 MIN (.984) .50 TYP. (.020) Standard TO-46 package Peak wavelength λp = 880 nm Good spectral matching to si-photodetector Radiant angle : 25° A C 2.54 (.100) 1.00 MIN (.040) Notes : 1. Tolerance is ± .010" unless otherwise noted. 2. Protruded resin under flange is .031"max. 3. Lead spacing is measured where the leads emerge from the package. Absolute Maximum Ratings @ TA=25 C Parameter Power Dissipation Peak Forward Current(300pps,10µs pulse) Continuos Forward Current Reverse V.

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Datasheet Details

Part number MIE-404L3
Manufacturer Unity Opto Technology
File Size 34.69 KB
Description GaAlAs HIGH POWER T0-46 PACKAGE INFRARED EMITTING DIODE
Datasheet download datasheet MIE-404L3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GaAlAs HIGH POWER T0-46 PACKAGE INFRARED EMITTING DIODE Description The MIE-404L3 is an infrared emitting diode with GaAlAs / GaAlAs die technology molded in a water clear plastic package. 5.60 (.221) £r 4.75 (.187) MIE-404L3 Unit : mm (inches ) 45° CATHODE INDICATOR Package Dimensions .70 (.028) 5.46 (.215) .25 MAX (.059 ) Features l l l l 25.00 MIN (.984) .50 TYP. (.020) Standard TO-46 package Peak wavelength λp = 880 nm Good spectral matching to si-photodetector Radiant angle : 25° A C 2.54 (.100) 1.00 MIN (.040) Notes : 1. Tolerance is ± .010" unless otherwise noted. 2. Protruded resin under flange is .031"max. 3. Lead spacing is measured where the leads emerge from the package.