MIE-514A4 - AlGaAs/GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE

Unity Opto Technology

General Description

The MIE-514A4 is an infrared emitting diodes in GaAs technology with AlGaAs window coating encapsulated in water clear package.

Key Features

l SEE NOTE 2 FLAT.

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MIE-514A4 algaas/gaas high power t-1 3/4 package infrared emitting diode by Unity Opto Technology - Datasheet Preview

Datasheet Details

Part number	MIE-514A4
Manufacturer	Unity Opto Technology
File Size	33.04 KB
Description	AlGaAs/GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE
Datasheet	MIE-514A4 Datasheet

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Other Datasheets by Unity Opto Technology

Part Number	Description
MIE-514H4	GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE
MIE-514L3	GaAlAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
MIE-516A2U	AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
MIE-516A4U	AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
MIE-516L3U	GaAlAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AlGaAs/GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description The MIE-514A4 is an infrared emitting diodes in GaAs technology with AlGaAs window coating encapsulated in water clear package. 7.62 (.300) MIE-514A4 Package Dimensions φ5.05 (.200) Unit: mm (inches) 5.47 (.215) 5.90 (.230) 1.00 (.040) Features l SEE NOTE 2 FLAT DENOTES CATHODE High radiant power and high radiantintensity Standard T-1 3/4 ( φ 5mm) package Peak wavelength λp = 940 nm Good spectral matching to si-photodetector Radiant angle : 16° 2.54NOM. (.100) SEE NOTE 3 1.00MIN. (.040) 0.50 TYP. (.020) 23.40 MIN (.920) l l l l A C Notes : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 1.5 mm (.059") max. 3.