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MIE-524A4 - AlGaAs/GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE

General Description

The MIE-524A4 is an infrared emitting diode utilizing GaAs with AlGaAs window coating chip technology.

It is molded in water clear plastic package.

Key Features

  • l 23.40 MIN. (.920) 0.50 TYP. (.020) High radiant power and high radiant intensity Suitable for DC and high pulse current operation Standard T-1 3/4 ( φ 5mm ) package, radiation angle : 20° Peak wavelength λp = 940 nm Good spectral matching to si-photodetector l l 1.00MIN (.040) 2.54 (.100) l l A C Notes : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 1.5 mm (.059") max. 3. Lead spacing is measured where the leads emerge from the package.

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Datasheet Details

Part number MIE-524A4
Manufacturer Unity Opto Technology
File Size 32.36 KB
Description AlGaAs/GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE
Datasheet download datasheet MIE-524A4 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AlGaAs/GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description The MIE-524A4 is an infrared emitting diode utilizing GaAs with AlGaAs window coating chip technology. It is molded in water clear plastic package. 7.62 (.300) MIE-524A4 Package Dimensions φ 5.05 (.200) Unit : mm (inches ) 5.47 (.215) 5.90 (.230) 1.00 (.040) FLAT DENOTES CATHODE Features l 23.40 MIN. (.920) 0.50 TYP. (.020) High radiant power and high radiant intensity Suitable for DC and high pulse current operation Standard T-1 3/4 ( φ 5mm ) package, radiation angle : 20° Peak wavelength λp = 940 nm Good spectral matching to si-photodetector l l 1.00MIN (.040) 2.54 (.100) l l A C Notes : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 1.5 mm (.059") max.