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MIE-534A4 - AlGaAs/GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE

General Description

The MIE-534A4 is an infrared emitting diode utilizing GaAs with AlGaAs window coating chip technology.

It is molded in water clear plastic package.

Key Features

  • SEE NOTE 2 l l l l l 1.00 (.039) High radiant power and high radiant intensity FLAT.

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Datasheet Details

Part number MIE-534A4
Manufacturer Unity Opto Technology
File Size 30.92 KB
Description AlGaAs/GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE
Datasheet download datasheet MIE-534A4 Datasheet

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Other Datasheets by Unity Opto Technology

Part Number Description
MIE-534H4 GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AlGaAs/GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description The MIE-534A4 is an infrared emitting diode utilizing GaAs with AlGaAs window coating chip technology. It is molded in water clear plastic package. MIE-534A4 Unit: mm ( inches ) Package Dimensions φ 5.05 (.199) 5.47 (.215) 7.62 (.300) 5.90 (.230) Features SEE NOTE 2 l l l l l 1.00 (.039) High radiant power and high radiant intensity FLAT DENOTES CATHODE Suitable for DC and high pulse current operation Standard T-1 3/4 ( φ 5mm ) package, radiant angle : 30° Peak wavelength λp = 940 nm Good spectral matching to si-photodetector 0.50 TYP. (.020) 23.40 MIN. (.921) 1.00MIN. (.039) 2.54 NOM. (.100) SEE NOTE 3 A C Notes : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2.