MIT-5A116 Overview
Description
The MIT-5A116 consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a black plastic housing. It is a transmissive subminiature photointerrupter.
Key Features
- A 7.5 ± 0.3 (.295) 3.7 ± 0.2 (.146) 10.0 (.394) 2.5 (.098) Unit mA V mW V V mW mW Unity Opto Technology Co., Ltd
