MIT-5A11B Overview
The MIT-5A11B consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a black plastic housing . It is a transmissive subminiature photointerrupter. 2 1 11.00 (.433) 7.00 (.276) MIT-5A11B Package Dimensions 13.00 (.512) Unit:.
MIT-5A11B Key Features
- line socket mounting Fast switching speed Choice of mounting configuration