UM3413 Datasheet | UniverChipSemi

-20V P-Channel Enhancement Mode MOSFET - DESCRIPTION The UM3413 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density advanced trench technology.. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, and low in-line power loss are needed in a very small outline surface mount package. - FEATURE - -20V/-4.6A, RDS(ON)=35mΩ (typ.)@VGS=-4.5V - -20V/-4.1A,RDS(ON)=45mΩ (typ.)@VGS=-2.5V - -20V/-3.6A,RDS(ON)=53mΩ (typ.)@VGS=-1.8V - Super high design for extremely low RDS(ON) - Exceptional on-resistance and Maximum DC current capability - Full...