UM3415 Datasheet | UniverChipSemi

-20V P-Channel Enhancement Mode MOSFET - DESCRIPTION The UM3415 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density advanced trench technology.. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, and low in-line power loss are needed in a very small outline surface mount package. ESD Protected : 3KV - FEATURE - -20V/-4.0A, RDS(ON)=35mΩ (typ.)@VGS=-4.5V - -20V/-4.0A,RDS(ON)=46mΩ (typ.)@VGS=-2.5V - -20V/-2.0A,RDS(ON)=70mΩ (typ.)@VGS=-1.8V - -20V/-1.0A,RDS(ON)=85mΩ (typ.)@VGS=-1.5V - Super high design for extremely low RDS(ON) -...