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UM4447A - P-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

The UM4447A is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density advanced trench technology..

This high density process is especially tailored to minimize on-state resistance.

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Datasheet Details

Part number UM4447A
Manufacturer UniverChipSemi
File Size 1.13 MB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet UM4447A Datasheet
Additional preview pages of the UM4447A datasheet.

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UM4447A -30V P-Channel Enhancement Mode MOSFET  DESCRIPTION The UM4447A is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density advanced trench technology.. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching ESD Protected : 3KV  FEATURE  -30V/-15A, RDS(ON)=5.5mΩ (typ.)@VGS=-10V  -30V/-10A, RDS(ON)=6.5mΩ (typ.)@VGS=-4.
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