UM4447A Datasheet | UniverChipSemi

-30V P-Channel Enhancement Mode MOSFET - DESCRIPTION The UM4447A is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density advanced trench technology.. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook puter power management and other battery powered circuits where high-side switching ESD Protected : 3KV - FEATURE - -30V/-15A, RDS(ON)=5.5mΩ (typ.)@VGS=-10V - -30V/-10A, RDS(ON)=6.5mΩ (typ.)@VGS=-4.5V - Super high design for extremely low RDS(ON) - Exceptional on-resistance and Maximum DC current capability - Full RoHS...