Datasheet4U Logo Datasheet4U.com

UM4800 - Dual N-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

The UM4800 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density advanced trench technology..

This high density process is especially tailored to minimize on-state resistance.

📥 Download Datasheet

Datasheet preview – UM4800

Datasheet Details

Part number UM4800
Manufacturer UniverChipSemi
File Size 1.61 MB
Description Dual N-Channel Enhancement Mode MOSFET
Datasheet download datasheet UM4800 Datasheet
Additional preview pages of the UM4800 datasheet.

📁 Similar Datasheet

  • UM487 - HCGA CONTROLLER (UMC Corporation)
  • UM488 - Slew-Rate-Limited RS-422 Transceivers (Union Semiconductor)
  • UM400 - 5 to 6 Watt DC-DC Converters (UNIVERSAL MICROELECTRONICS)
  • UM4000 - HIGH POWER PIN DIODES (Microsemi)
  • UM4001 - HIGH POWER PIN DIODES (Microsemi)
  • UM4002 - HIGH POWER PIN DIODES (Microsemi)
  • UM4006 - HIGH POWER PIN DIODES (Microsemi)
  • UM401 - 5 to 6 Watt DC-DC Converters (UNIVERSAL MICROELECTRONICS)
  • UM4010 - HIGH POWER PIN DIODES (Microsemi)
  • UM402 - 5 to 6 Watt DC-DC Converters (UNIVERSAL MICROELECTRONICS)
Other Datasheets by UniverChipSemi
  • UM4803A - Dual P-Channel Enhancement Mode MOSFET
  • UM4805 - Dual P-Channel Enhancement Mode MOSFET
  • UM4842 - Dual N-Channel Enhancement Mode MOSFET
  • UM4406A - N-Channel Enhancement Mode MOSFET
  • UM4407A - P-Channel Enhancement Mode MOSFET
  • UM4409 - P-Channel Enhancement Mode MOSFET
  • UM4419 - P-Channel Enhancement Mode MOSFET
  • UM4423 - P-Channel Enhancement Mode MOSFET

Full PDF Text Transcription

Click to expand full text
UM4800 30V Dual N-Channel Enhancement Mode MOSFET  DESCRIPTION The UM4800 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density advanced trench technology.. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, and low in-line power loss are needed in a very small outline surface mount package.  FEATURE  30V/5.8A, RDS(ON)=18mΩ (typ.)@VGS=10V  30V/5.0A, RDS(ON)=24mΩ (typ.)@VGS=4.5V  30V/3.5A, RDS(ON)=30mΩ (typ.)@VGS=2.
Published: |