UM4800 - Dual N-Channel Enhancement Mode MOSFET

General Description

The UM4800 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density advanced trench technology..

This high density process is especially tailored to minimize on-state resistance.

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UM4800 dual n-channel enhancement mode mosfet by UniverChipSemi - Datasheet Preview

Datasheet Details

Part number	UM4800
Manufacturer	UniverChipSemi
File Size	1.61 MB
Description	Dual N-Channel Enhancement Mode MOSFET
Datasheet	UM4800 Datasheet

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UM4800 30V Dual N-Channel Enhancement Mode MOSFET  DESCRIPTION The UM4800 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density advanced trench technology.. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, and low in-line power loss are needed in a very small outline surface mount package.  FEATURE  30V/5.8A, RDS(ON)=18mΩ (typ.)@VGS=10V  30V/5.0A, RDS(ON)=24mΩ (typ.)@VGS=4.5V  30V/3.5A, RDS(ON)=30mΩ (typ.)@VGS=2.