UT62L5128 Datasheet | Utron technology

TION Original. Rev. 1.1 Rev. 1.2 Rev. 1.3 Rev. 1.4 UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 P80051 .Data Sheet.in  UTRON Rev. 1.4 512K X 8 BIT LOW POWER CMOS SRAM GENERAL DESCRIPTION The UT62L5128 is a 4,194,304-bit low power CMOS static random access memory organized as 524,288 words by 8 bits. It is fabricated using high performance, high reliability CMOS technology. The UT62L5128 operates from a wide range 2.7V~3.6V power supply and supports extended operating temperature range. The UT62L5128 is designed for high density and low power memory applications. The device has a data retention mode that guarantees data to remain valid at a minimum power supply voltage of 1.5V. Features Fast Access time : 55/70/100ns CMOS Low power operating Operating current : 40/30/25m A (Icc max.) Standby current : 20µA (typ.) L-version 2µA (typ.) LL-version Single 2.7V~3.6V power supply Operating Temperature : mercial : 0¢J ~70¢J Extended : -20¢J ~80¢J All inputs and outputs TTL patible Fully static operation Three state outputs Data retention voltage : 1.5V (min) Package : 32-pin 450 mil SOP 32-pin 8mm × 20mm TSOP-¢¹ 32-pin 8mm × 13.4mm STSOP 36-pin 6mm × 8mm TFBGA FUNCTIONAL BLOCK DIAGRAM 512K ¡Ñ 8 MEMORY ARRAY A0-A18 DECODER Vcc Vss I/O1-I/O8 I/O DATA CIRCUIT COLUMN I/O OE WE CONTROL CIRCUIT UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 P80051 .Data Sheet.in  UTRON Rev....