ELECTRICAL CHARACTERISTICS
¡G c¡B Revised VIH as 2.2V 1. Revised Operation surrent : -Icc(max) 45/35/25mA 40/30/25mA -Icc(Typ) 30/25/20mA 30/20/16mA 2. Revised Standby current : 20/3uA 20/2uA 3. Revised VOH(Typ) : NA 2.7V May 8,2003 4. Add VIH(max)=VCC+2.0V for pulse width less than 10ns. VIL(min)=VSS-2.0V for pulse width less than 10ns. 5. Revised AC Table tOHZ* characteristics 6. Add order information for lead free product DESCRIPTION
Original. Rev. 1.1 Rev. 1.2 Rev. 1.3 Rev. 1.4 UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 P80051 1 UTRON Rev. 1.4 UT62L5128 512K X 8 BIT LOW POWER CMOS SRAM GENERAL DESCRIPTION
The UT62L5128 is designed for high density and low power memory applications. The device has a data retention mode that guarantees data to remain valid at a minimum power supply voltage of 1.5V. FEATURES
Fast Access time : 55/70/100ns CMOS Low power operating Operating current : 40/3...
