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2N0608-VB TO263
2N0608-VB TO263 Datasheet
N-Channel 60 V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS RDS(on) VGS = 10 V ID Configuration
60
V
4
m
150
A
Single
FEATURES • Trench power MOSFET • Package with low thermal resistance
• 100 % Rg and UIS tested
TO-263
D
Top View
S D G
G
N-Channel MOSFET
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
TC = 25 °C a TC = 125 °C
ID
Continuous Source Current (Diode Conduction) a
IS
Pulsed Drain Current b
IDM
Single Pulse Avalanche Current Single Pulse Avalanche Energy
L = 0.