2N0608 - N-Channel 60V MOSFET

VBsemi

Key Features

Trench power MOSFET.
Package with low thermal resistance.
100 % Rg and UIS tested TO-263 D Top View S D G G N-Channel MOSFET S.

2N0608 n-channel 60v mosfet by VBsemi - Datasheet Preview

Datasheet Details

Part number	2N0608
Manufacturer	VBsemi
File Size	390.21 KB
Description	N-Channel 60V MOSFET
Datasheet	2N0608 Datasheet

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Full PDF Text Transcription (Reference)

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2N0608-VB TO263 2N0608-VB TO263 Datasheet N-Channel 60 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS RDS(on) VGS = 10 V ID Configuration 60 V 4 m 150 A Single FEATURES • Trench power MOSFET • Package with low thermal resistance • 100 % Rg and UIS tested TO-263 D Top View S D G G N-Channel MOSFET S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C a TC = 125 °C ID Continuous Source Current (Diode Conduction) a IS Pulsed Drain Current b IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.