2N0608
FEATURES
- Trench power MOSFET
- Package with low thermal resistance
- 100 % Rg and UIS tested
TO-263
Top View
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TC = 25 °C a TC = 125 °C
Continuous Source Current (Diode Conduction) a
Pulsed Drain Current b
Single Pulse Avalanche Current Single Pulse Avalanche Energy
L = 0.1 m H
IAS EAS
Maximum Power Dissipation b
TC = 25 °C TC = 125 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
THERMAL RESISTANCE RATINGS
PARAMETER Junction-to-Ambient
Junction-to-Case (Drain)
Notes a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR4 material).
PCB Mount c
SYMBOL Rth JA Rth JC
LIMIT 60 ± 20 150 65 120 350 65 211 220 70
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