2SJ0582
2SJ0582 is Power MOSFET manufactured by VBsemi.
FEATURES
- Surface mount
- Available in tape and reel
- Dynamic d V/dt rating
- Repetitive avalanche rated
- P-channel
- Fast switching
- Ease of paralleling
.VBsemi.
Available Available
TO-252 S
GDS Top View
Drain Connected to Tab
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current a Linear Derating Factor
VGS at -10 V
TC = 25 °C TC = 100 °C
Linear Derating Factor (PCB mount) e
Single Pulse Avalanche Energy b Avalanche Current a Repetitive Avalanche Energy a Maximum Power Dissipation Maximum Power Dissipation (PCB mount) e Peak Diode Recovery d V/dt c
TC = 25 °C TA = 25 °C
EAS IAR EAR
PD d V/dt
Operating Junction and Storage Temperature Range Soldering Remendations (Peak temperature) d for 10 s
TJ, Tstg
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = -50 V, starting TJ = 25 °C, L = 17 m H, Rg = 25 , IAS = -6.5 A (see fig. 12). c. ISD -6.5 A, d I/dt 120 A/μs, VDD VDS, TJ 150 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material).
LIMIT -200 ± 20 -3.6 -2.5 -15 0.59 0.025 500 -6.4 7.4 74 3.0 -5.0 -55 to +150 300
UNIT V
W/°C m J A m J W V/ns...