VBsemi Electronics 2SJ0582
Power MOSFET
| Part No. | 2SJ0582 |
|---|---|
| Datasheet | 2SJ0582 Download |
| Manufacturer | VBsemi Electronics |
| Description | Power MOSFET |
| Buy | Stock & Price |
FEATURES
● Surface mount● Available in tape and reel
● Dynamic dV/dt rating
● Repetitive avalanche rated
● P-channel
● Fast switching
● Ease of paralleling Available Available TO-252 S GDS Top View Drain Connected to Tab G D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current a Linear Derating Factor VDS VGS VGS at -10 V TC = 25 °C TC = 100 °C ID IDM Linear Derating Factor (PCB mount) e Single Pulse Avalanche Energy b Avalanche Current a Repetitive Avalanche Energy a Maximum Power Dissipation Maximum Power Dissipation (PCB mount) e Peak Diode Recovery dV/dt c TC = 25 °C TA = 25 °C EAS IAR EAR PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak temperature) d for 10 s TJ, Tstg Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = -50 V, starting TJ = 25 °C, L = 17 mH, Rg = 25 , IAS = -6.5 A (see fig.
