VBsemi Electronics 2SJ288
60V P-Channel MOSFET
| Part No. | 2SJ288 |
|---|---|
| Datasheet | 2SJ288 Download |
| Manufacturer | VBsemi Electronics |
| Description | 60V P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Trench Power MOSFET 100● % UIS Tested
APPLICATIONS
● Load Switch D S G GD S D P-Channel MOSFETABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current IDM Avalanche Current Pulse Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg Limit - 60 ± 20 - 6.5a - 5.2 - 4 .8b - 4.1b - 20 - 4.5 10.1 6.9a 3.5b 10.4a 6.6a 2.1b 1.1b - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb Maximum Junction-to-Case Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. Steady State Steady State Symbol RthJA RthJC Typical 33 0.98 Maximum 40 1.2 Unit V A mJ A W °C Unit °C/W 1 2SJ288-VB SPEC...
