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2SJ288 - P-Channel MOSFET

Key Features

  • s.
  • VDS (V) =-60V.
  • ID =-0.5 A.
  • RDS(ON) ＜ 3Ω (VGS =-10V).
  • RDS(ON) ＜ 4Ω (VGS =-4V) 1.70 0.1 0.42 0.1 0.46 0.1 1.Gate 2.Drain 3.Source.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage VDS -60 V VGS ±15 Continuous Drain Current Pulsed Drain Current (Note.1) ID -0.5 A IDM -2 Power Dissipation Tc = 25℃ PD 3.5 W 1.3 Junction Temperature Junction Storage Temperature Range TJ 150 ℃ Tstg -55 to.

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SMD Type P-Channel MOSFET 2SJ288 MOSFET ■ Features ● VDS (V) =-60V ● ID =-0.5 A ● RDS(ON) ＜ 3Ω (VGS =-10V) ● RDS(ON) ＜ 4Ω (VGS =-4V) 1.70 0.1 0.42 0.1 0.46 0.1 1.Gate 2.Drain 3.Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage VDS -60 V VGS ±15 Continuous Drain Current Pulsed Drain Current (Note.1) ID -0.5 A IDM -2 Power Dissipation Tc = 25℃ PD 3.5 W 1.3 Junction Temperature Junction Storage Temperature Range TJ 150 ℃ Tstg -55 to 150 Note.