| Part Number | 2SJ288 Datasheet |
|---|---|
| Manufacturer | VBsemi |
| Overview |
2SJ288-VB
2SJ288-VB Datasheet P-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
- 60
0.058 at VGS = - 10 V
0.065 at VGS = - 4.5 V
ID (A)a - 6.5 - 5.5
Qg (Typ.) 30 nC
FEATURES •.
* Trench Power MOSFET 100 * % UIS Tested APPLICATIONS * Load Switch D S G GD S D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 15. |
2SJ288 Datasheet and Specifications PDF
The 2SJ288 is a 60V P-Channel MOSFET.
| Part Number | 2SJ288 Datasheet |
|---|---|
| Description | P-Channel MOSFET |
| Manufacturer | Kexin Semiconductor |
| Overview |
SMD Type
P-Channel MOSFET 2SJ288
MOSFET
■ Features
● VDS (V) =-60V ● ID =-0.5 A ● RDS(ON) ＜ 3Ω (VGS =-10V) ● RDS(ON) ＜ 4Ω (VGS =-4V)
1.70 0.1
0.42 0.1
0.46 0.1
1.Gate 2.Drain 3.Source
■ Absolu.
* VDS (V) =-60V * ID =-0.5 A * RDS(ON) ＜ 3Ω (VGS =-10V) * RDS(ON) ＜ 4Ω (VGS =-4V) 1.70 0.1 0.42 0.1 0.46 0.1 1.Gate 2.Drain 3.Source * Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage VDS -60 V VGS ±15 Continuous Drain Current Pu. |
| Part Number | 2SJ288 Datasheet |
|---|---|
| Description | P-Channel Silicon MOSFET |
| Manufacturer | SANYO |
| Overview |
Ordering number:EN4308
Features
· Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive.
P-Channel Silicon MOSFET
2SJ288
Ultrahigh-Speed Switching Applications
Package Dimensions
unit.
* Low ON resistance. * Ultrahigh-speed switching. * Low-voltage drive. P-Channel Silicon MOSFET 2SJ288 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2062A [2SJ288] 4.5 1.6 1.5 4.25max 2.5 1.0 0.4 0.5 3 2 1 1.5 3.0 0.75 Specifications Absolute Maximum Ratings . |