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2SJ287 - P-Channel MOSFET

Key Features

  • s.
  • VDS (V) =-30V.
  • ID =-500m A.
  • RDS(ON) ＜ 2.2Ω (VGS =-10V).
  • RDS(ON) ＜ 3.3Ω (VGS =-4V) 0.42 0.1 0.46 0.1.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note.1) Power Dissipation Tc = 25.
  • Junction Temperature Junction Storage Temperature Range Note.1: PW ≤ 10ms,Duty Cycle ≤ 50%.
  • Electrical Characteristics Ta = 25℃ Parameter Symbol Drain-Source Breakdown Voltage Zero.

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SMD Type P-Channel MOSFET 2SJ287 MOSFET 1.70 0.1 ■ Features ● VDS (V) =-30V ● ID =-500m A ● RDS(ON) ＜ 2.2Ω (VGS =-10V) ● RDS(ON) ＜ 3.3Ω (VGS =-4V) 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note.1) Power Dissipation Tc = 25¥ Junction Temperature Junction Storage Temperature Range Note.