| Part Number | 2SJ287 Datasheet |
|---|---|
| Manufacturer | VBsemi |
| Overview |
2SJ287-VB
2SJ287-VB Datasheet
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 30
0.050 at VGS = - 10 V
0.056 at VGS = - 4.5 V
ID (A)d - 7.6 - 6.0
Qg (Typ.) 1.
* Halogen-free According to IEC 61249-2-21 Definition * Trench Power MOSFET * 100 % Rg Tested APPLICATIONS * Load Switch * Battery Switch S G GD S D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VG. |
2SJ287 Datasheet and Specifications PDF
The 2SJ287 is a 30V P-Channel MOSFET.
| Part Number | 2SJ287 Datasheet |
|---|---|
| Description | P-Channel MOSFET |
| Manufacturer | Kexin Semiconductor |
| Overview |
SMD Type
P-Channel MOSFET 2SJ287
MOSFET
1.70 0.1
■ Features
● VDS (V) =-30V ● ID =-500m A ● RDS(ON) ＜ 2.2Ω (VGS =-10V) ● RDS(ON) ＜ 3.3Ω (VGS =-4V)
0.42 0.1
0.46 0.1
■ Absolute Maximum Ratings T.
* VDS (V) =-30V * ID =-500m A * RDS(ON) ＜ 2.2Ω (VGS =-10V) * RDS(ON) ＜ 3.3Ω (VGS =-4V) 0.42 0.1 0.46 0.1 * Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note.1) Power Dissipation Tc = 25 * Junction Temper. |
| Part Number | 2SJ287 Datasheet |
|---|---|
| Description | P-Channel Silicon MOSFET |
| Manufacturer | SANYO |
| Overview |
Ordering number:EN4307
Features
· Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive.
P-Channel Silicon MOSFET
2SJ287
Ultrahigh-Speed Switching Applications
Package Dimensions
unit.
* Low ON resistance. * Ultrahigh-speed switching. * Low-voltage drive. P-Channel Silicon MOSFET 2SJ287 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2062A [2SJ287] 4.5 1.6 1.5 4.25max 2.5 1.0 0.4 0.5 3 2 1 1.5 3.0 0.75 Specifications Absolute Maximum Ratings . |