VBsemi Electronics 2SJ387S
20V P-Channel MOSFET
| Part No. | 2SJ387S |
|---|---|
| Datasheet | 2SJ387S Download |
| Manufacturer | VBsemi Electronics |
| Description | 20V P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Halogen-free According to IEC 61249-2-21 Definition● Trench Power MOSFET
● 100 % Rg Tested
APPLICATIONS
● Load Switch● Battery Switch GD S D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID Pulsed Drain Current TA = 70 °C IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD Operating Junction and Storage Temperature Range TA = 70 °C TJ, Tstg Limit - 20 ± 12 - 40 - 35 - 30.0a, b - 28 a, b - 150 - 3.5 - 2.1a, b 40 27 2.5a, b 1.6a, b - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, c Maximum Junction-to-Foot Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Maximum under Steady State conditions is 95 °C/W. d. Based on TC = 25 °C. t ≤ 10 s Steady State Symbol RthJA RthJF Typical 40 24 Maximum...
