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2SJ607 - 60V P-Channel MOSFET

Key Features

  • Trench Power MOSFET.
  • Compliant to RoHS Directive 2002/95/EC.

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Datasheet Details

Part number 2SJ607
Manufacturer VBsemi
File Size 249.86 KB
Description 60V P-Channel MOSFET
Datasheet download datasheet 2SJ607 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SJ607-VB 2SJ607-VB Datasheet P-Channel 60 V (D-S) 175 °C MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () - 60 0.0074 at VGS = - 10 V 0.0094 at VGS = - 4.5 V ID (A)c - 90 - 90 FEATURES • Trench Power MOSFET • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Primary Switch RoHS COMPLIANT TO-220AB S G Drain connected to Tab GD S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C)c TC = 25 °C TC = 125 °C ID Pulsed Drain Current Avalanche Current Single Pulse Avalanche Energya IDM IAS L = 0.