2SJ607 Description
The 2SJ607 is P-channel MOS Field Effect Transistor designed for high current switching applications.
2SJ607 Key Features
- Super low on-state resistance: RDS(on)1 = 11 mΩ MAX. (VGS = -10 V, ID = -42 A) RDS(on)2 = 16 mΩ MAX. (VGS = -4.0 V, ID =
- Low input capacitance: Ciss = 7500 pF TYP. (VDS = -10 V, VGS = 0 V)
- Built-in gate protection diode