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2SJ607 - MOS FIELD EFFECT TRANSISTOR

General Description

The 2SJ607 is P-channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

  • Super low on-state resistance: RDS(on)1 = 11 mΩ MAX. (VGS =.
  • 10 V, ID =.
  • 42 A) RDS(on)2 = 16 mΩ MAX. (VGS =.
  • 4.0 V, ID =.
  • 42 A).
  • Low input capacitance: Ciss = 7500 pF TYP. (VDS =.
  • 10 V, VGS = 0 V).
  • Built-in gate protection diode Note TO-220SMD package is produced only in Japan (TO-220AB).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ607 SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ607 is P-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SJ607 2SJ607-S 2SJ607-ZJ 2SJ607-Z PACKAGE TO-220AB TO-262 TO-263 TO-220SMD Note FEATURES • Super low on-state resistance: RDS(on)1 = 11 mΩ MAX. (VGS = −10 V, ID = −42 A) RDS(on)2 = 16 mΩ MAX. (VGS = −4.0 V, ID = −42 A) • Low input capacitance: Ciss = 7500 pF TYP. (VDS = −10 V, VGS = 0 V) • Built-in gate protection diode Note TO-220SMD package is produced only in Japan (TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) www.DataSheet4U.