Datasheet Summary
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
SWITCHING P-CHANNEL POWER MOS FET
DESCRIPTION
The 2SJ607 is P-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER 2SJ607 2SJ607-S 2SJ607-ZJ 2SJ607-Z PACKAGE TO-220AB TO-262 TO-263 TO-220SMD
Note
Features
- Super low on-state resistance: RDS(on)1 = 11 mΩ MAX. (VGS =
- 10 V, ID =
- 42 A) RDS(on)2 = 16 mΩ MAX. (VGS =
- 4.0 V, ID =
- 42 A)
- Low input capacitance: Ciss = 7500 pF TYP. (VDS =
- 10 V, VGS = 0 V)
- Built-in gate protection diode
Note TO-220SMD package is produced only in Japan
(TO-220AB)...
