Datasheet4U Logo Datasheet4U.com

2SJ607-ZJ - P-Channel MOSFET

Key Features

  • s.
  • VDS (V) =-60V.
  • ID =-83A.
  • RDS(ON) ＜ 11mΩ (VGS =-10V).
  • RDS(ON) ＜ 16mΩ (VGS =-4V).
  • Low Ciss: Ciss = 7500 pF (TYP. ) Drain Gate Body Diode Gate Protection Diode Source.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note.1) Single Avalanche Current (Note.2) Power Dissipation Single Avalanche Energy (Note.2) Junction Temperature Junction Storage Temperature Range Symbol Rating.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SJ607-Z 60V P-Channel MOSFET VBsemi
2SJ607 MOS FIELD EFFECT TRANSISTOR NEC
2SJ607 60V P-Channel MOSFET VBsemi
2SJ600 P-Channel Power MOSFET NEC
2SJ601 P-Channel Power MOSFET NEC

Other Datasheets by Kexin Semiconductor

Part Number Description
2SJ607 MOS Field Effect Transistor
2SJ600 MOSFET
2SJ600-Z P-Channel MOSFET
2SJ601 MOS Field Effect Transistor
2SJ602 MOS Field Effect Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type P-Channel MOSFET 2SJ607-ZJ MOSFET ■ Features ● VDS (V) =-60V ● ID =-83A ● RDS(ON) ＜ 11mΩ (VGS =-10V) ● RDS(ON) ＜ 16mΩ (VGS =-4V) ● Low Ciss: Ciss = 7500 pF (TYP.) Drain Gate Body Diode Gate Protection Diode Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note.1) Single Avalanche Current (Note.2) Power Dissipation Single Avalanche Energy (Note.2) Junction Temperature Junction Storage Temperature Range Symbol Rating Unit VDS -60 V VGS ±20 ID -83 IDM -332 A IAS -50 160 PD W 1.5 EAS 250 mJ TJ 150 ℃ Tstg -55 to 150 Note.1: PW ≤ 10us,Duty Cycle ≤ 1% Note.2: Starting TJ = 25 °C,VDD=-30V, RG = 25Ω , VGS = –20 V → 0 www.kexin.com.