2SJ636 Description
2SJ636-VB 2SJ636-VB Datasheet P-Channel 100 V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 100 0.250 at VGS = - 10 V 0.280 at VGS = - 4.5 V ID (A) - 8.8 - 8.0 Qg (Typ.) 11.7 TO-252.
2SJ636 Key Features
- Halogen-free According to IEC 61249-2-21
- Trench Power MOSFET
- 100 % Rg and UIS Tested
- pliant to RoHS Directive 2002/95/EC