2SJ636 - 100V P-Channel MOSFET

VBsemi

Key Features

Halogen-free According to IEC 61249-2-21 Definition.
Trench Power MOSFET.
100 % Rg and UIS Tested.
Compliant to RoHS Directive 2002/95/EC.

2SJ636 100v p-channel mosfet by VBsemi - Datasheet Preview

Datasheet Details

Part number	2SJ636
Manufacturer	VBsemi
File Size	228.69 KB
Description	100V P-Channel MOSFET
Datasheet	2SJ636 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SJ636-VB 2SJ636-VB Datasheet P-Channel 100 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 100 0.250 at VGS = - 10 V 0.280 at VGS = - 4.5 V ID (A) - 8.8 - 8.0 Qg (Typ.) 11.7 TO-252 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Trench Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Power Switch • DC/DC Converters S G GDS Top View Drain Connected to Tab D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS - 100 V VGS ± 20 Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TC = 25 °C TC = 70 °C ID - 8.8 - 7.