2SK1838S Datasheet | VBsemi

FEATURES - Dynamic d V/dt Rating - Repetitive Avalanche Rated - Available in Tape and Reel - Fast Switching - Ease of Paralleling DPAK (TO-252) D N-Channel MOSFET .VBsemi. ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C Linear Derating Factor (PCB Mount)e Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Maximum Power Dissipation (PCB Mount)e Peak Diode Recovery d V/dtc TC = 25 °C TA = 25 °C EAS IAR EAR PD d V/dt Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature)d for 10 s TJ, Tstg Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V; starting TJ = 25 °C, L = 14 m H, Rg = 25 , IAS = 3.8 A (see fig. 12). c. ISD  3.8 A, d I/dt  90 A/μs, VDD  VDS, TJ  150 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material) . LIMIT 250 ± 20 4.5 3.0 16 0.33 0.020 130 4.5 5.2 45 2.5 4.8 - 55 to + 150 260 UNIT V A W/°C m J A m J W V/ns °C 2SK1838S-VB .VBsemi. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL...