2SK3101 - N-Channel 550V Power MOSFET

VBsemi

Key Features

Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness - Avalanche Energy Rated (UIS).
Optimal Efficiency and Operation - Low Cost - Simple Gate Drive Circuitry - Low Figure-of-Merit (FOM): Ron x Qg - Fast Switching D TO-220.

2SK3101 n-channel 550v power mosfet by VBsemi - Datasheet Preview

Datasheet Details

Part number	2SK3101
Manufacturer	VBsemi
File Size	292.58 KB
Description	N-Channel 550V Power MOSFET
Datasheet	2SK3101 Datasheet

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Full PDF Text Transcription (Reference)

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2SK3101-VB 2SK3101-VB Datasheet N-Channel 550V (D-S) Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 550 VGS = 10 V 150 12 25 Single 0.