Datasheet4U Logo Datasheet4U.com

2SK3105 - N-Channel MOSFET

General Description

The 2SK3105 is a switching device which can be driven directly by a 4 V power source.

Key Features

  • a low on-state resistance and excellent switching characteristics, and is suitable for.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK310 N-Channel MOSFET Transistor Inchange Semiconductor
2SK310 (2SK310 / 2SK311) SILICON N-CHANNEL MOS FET Hitachi Semiconductor
2SK3101 N-Channel 550V Power MOSFET VBsemi
2SK3101LS N-Channel Silicon MOSFET Sanyo
2SK3102-01R MOSFET / Power MOSFETs Fuji Semiconductors

Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
2SK3107 N-Channel MOSFET
2SK3108 N-Channel MOSFET
2SK3109 N-Channel MOSFET
2SK3110 N-Channel MOSFET
2SK3111 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3105 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SK3105 is a switching device which can be driven directly by a 4 V power source. The 2SK3105 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. PACKAGE DRAWING (Unit : mm) 0.4 +0.1 –0.05 0.16+0.1 –0.06 0.65–0.15 +0.1 2.8 ±0.2 3 1.5 0 to 0.1 1 2 FEATURES • Can be driven by a 4 V power source • Low on-state resistance RDS(on)1 = 95 mΩ MAX. (VGS = 10 V, ID = 1.5 A) RDS(on)2 = 135 mΩ MAX. (VGS = 4.5 V, ID = 1.5 A) RDS(on)3 = 150 mΩ MAX. (VGS = 4.0 V, ID = 1.5 A) 0.95 0.95 0.65 0.9 to 1.1 1.9 2.9 ±0.