Datasheet Summary
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK3109 is N channel MOS FET device that Features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter.
ORDERING INFORMATION
PART NUMBER 2SK3109 2SK3109-S 2SK3109-ZJ PACKAGE TO-220AB TO-262 TO-263
Features
- Gate voltage rating ±30 V
- Low on-state resistance RDS(on) = 0.4 Ω MAX. (VGS = 10 V, ID = 5.0 A)
- Low input capacitance Ciss = 400 pF TYP. (VDS = 10 V, VGS = 0 V)
- Avalanche capability rated
- Built-in gate protection diode
- Surface mount device...
