VBsemi Electronics 4816N
30V N-Channel MOSFET
| Part No. | 4816N |
|---|---|
| Datasheet | 4816N Download |
| Manufacturer | VBsemi Electronics |
| Description | 30V N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Halogen-free● Trench Power MOSFET
● Optimized for High-Side Synchronous Rectifier Operation
● 100 % Rg Tested
● 100 % UIS Tested S1 S2 S3 G4 SO-8 8D 7D 6D 5D
APPLICATIONS
● Notebook CPU Core - High-Side Switch D G Top View S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS
TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 30 VGS ± 20 V TC = 25 °C 13 Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID 10 9b, c Pulsed Drain Current TA = 70 °C IDM 7b, c 45 A Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS 3.7 2.0b, c Single Pulse Avalanche Current Avalanche Energy L = 0.1 mH IAS 20 EAS 21 mJ TC = 25 °C 4.1 Maximum Power Dissipation TC = 70 °C TA = 25 °C PD 2.5 W 2.2b, c TA = 70 °C 1.3b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t ≤ 10 s Steady State Notes: a. Base on TC = 25 °C. b.
