4N0602
FEATURES
- Trench power MOSFET
- Package with low thermal resistance
- 100 % Rg and UIS tested
TO-220AB
Top View
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction) Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy
Maximum Power Dissipation b
Operating Junction and Storage Temperature Range
TC = 25 °C TC = 125 °C
L = 0.1 m H TC = 25 °C TC = 125 °C
VDS VGS
IS IDM IAS EAS
TJ, Tstg
LIMIT 60 ± 20 270 120 a 120 a 600 75 281 375 125
-55 to +175
THERMAL RESISTANCE RATINGS
PARAMETER Junction-to-Ambient Junction-to-Case (Drain)
Notes a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square PCB (FR4 material).
PCB Mount c
SYMBOL Rth JA Rth JC
LIMIT 40 0.4
UNIT V
A m J W °C
UNIT °C/W
4N0602-VB TO220
.VBsemi.
SPECIFICATIONS (TC...
