4N0603
FEATURES
- Trench FET® Power MOSFET
- Package with Low Thermal Resistance
- 100 % Rg and UIS Tested
TO-252
GDS Top View
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TC = 25 °C
TC = 125 °C
Continuous Source Current (Diode Conduction)a
Pulsed Drain Currentb
Single Pulse Avalanche Current Single Pulse Avalanche Energy
L = 0.1 m H
Maximum Power Dissipationb
TC = 25 °C TC = 125 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
LIMIT 60 ± 20 97 56 100 290 45 101 136 45
- 55 to + 175
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
Notes a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing.
PCB...
