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4N0603 - N-Channel 60V MOSFET

Download the 4N0603 datasheet PDF. This datasheet also covers the 4N0603-TO263 variant, as both devices belong to the same n-channel 60v mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • Trench Power MOSFET.
  • Package with Low Thermal Resistance.
  • 100 % Rg and UIS Tested.
  • Compliant to RoHS Directive 2002/95/EC D G S N-Channel MOSFET.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (4N0603-TO263-VBsemi.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 4N0603
Manufacturer VBsemi
File Size 458.71 KB
Description N-Channel 60V MOSFET
Datasheet download datasheet 4N0603 Datasheet

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Other Datasheets by VBsemi

Part Number Description
4N0603 TO252 N-Channel MOSFET
4N0602 TO220 N-Channel 60V MOSFET
4N0607 TO220 N-Channel MOSFET
4N0607 TO252 N-Channel MOSFET
4N06L23 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
4N0603-VB TO263 4N0603-VB TO263 Datasheet N-Channel 60 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration 60 0.0028 0.0120 210 Single D2PAK (TO-263) GD S FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Trench Power MOSFET • Package with Low Thermal Resistance • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C TC = 125 °C ID Continuous Source Current (Diode Conduction)a IS Pulsed Drain Currentb IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.