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AO7401
P-Channel 20 V (D-S) MOSFET
www.VBsemi.tw
PRODUCT SUMMARY
VDS (V) - 20
RDS(on) () 0.080 at VGS = - 4.5 V 0.100 at VGS = - 2.5 V
ID (A)c - 3.1 - 2.3
Qg (Typ.) 4.3 nC
SOT-323 SC-70
G1
3D
S G
FEATURES • Halogen-free According to IEC 61249-2-21
Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC
APPLICATIONS • Load Switch • DC/DC Converters
S2 Top View
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage Gate-Source Voltage
VDS
- 20
V
VGS
± 12
TC = 25 °C
- 3.1
Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current
TC = 70 °C TA = 25 °C
ID
TA = 70 °C
IDM
- 2.1
- 1.4a, b
- 1.