VBsemi Electronics BSS192
P-Channel 200V MOSFET
| Part No. | BSS192 |
|---|---|
| Datasheet | BSS192 Download |
| Manufacturer | VBsemi Electronics |
| Description | P-Channel 200V MOSFET |
| Buy | Stock & Price |
FEATURES
● Halogen-free According to IEC 61249-2-21 Available● Trench Power MOSFET
● Ultra Low On-Resistance
● Small Size
APPLICATIONS
● Active Clamp Circuits in DC/DC Power Supplies S G GD S D P-Channel MOSFETABSOLUTE MAXIMUM RATINGS
TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State Unit Drain-Source Voltage Gate-Source Voltage VDS - 200 V VGS ± 20 Continuous Drain Current (TJ = 150 °C)a, b TA = 25 °C TA = 70 °C ID - 1.80 - 1.70 - 1.64 - 1.51 Pulsed Drain Current IDM - 5.5 A Continuous Source Current (Diode Conduction)a, b IS - 1.0 - 0.6 Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 1.0 mH IAS 4.0 EAS 1.2 mJ Maximum Power Dissipationa, b TA = 25 °C TA = 70 °C PD 1.45 0.95 0.8 0.48 W Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t 5 s Steady State Maximum Junction-to-Foot (Drain) Steady State Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Pulse width limited by maximum junction temperature.
