Datasheet Summary
D458-VB
D458-VB Datasheet
N-Channel 200 V (D-S) MOSFET
.VBsemi.
PRODUCT SUMMARY
VDS (V) 200
RDS(on) () 0.245 at VGS = 10 V
ID (A) 10
D TO-252
Features
- Trench Power MOSFET
- 175 °C Junction Temperature
- PWM Optimized
- 100 % Rg Tested
- pliant to RoHS Directive 2002/95/EC
APPLICATIONS
- Primary Side Switch
GD S
S N-Channel...
