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D458 - 2SD458

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) High Power Dissipation- : PC= 80W(Max)@TC=25℃ APPLICATIONS

Designed for high power amplifier and switching applications.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification 2SD458 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Power Dissipation- : PC= 80W(Max)@TC=25℃ APPLICATIONS ·Designed for high power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCER Collector-Emitter Voltage RBE= 50Ω VCEO Collector-Emitter Voltage 600 V 600 www.DataSheet.co.kr V 400 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 5A ICM Collector Current-Peak 10 A IBB Base Current-Continuous 2A IBM Base Current-Peak PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature 3A 80 W 150 ℃ -65~150 ℃ isc Website：www.