D458 Overview
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Power Dissipation- : PC= 80W(Max)@TC=25℃ APPLICATIONS ·Designed for high power amplifier and switching applications.
D458 datasheet by Inchange Semiconductor.
| Part number | D458 |
|---|---|
| Datasheet | D458-InchangeSemiconductor.pdf |
| File Size | 109.27 KB |
| Manufacturer | Inchange Semiconductor |
| Description | 2SD458 |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Power Dissipation- : PC= 80W(Max)@TC=25℃ APPLICATIONS ·Designed for high power amplifier and switching applications.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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D458 | N-Channel 200V MOSFET | VBsemi |
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