Datasheet Details
| Part number | D458 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 109.27 KB |
| Description | 2SD458 |
| Datasheet | D458-InchangeSemiconductor.pdf |
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Overview: INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product.
| Part number | D458 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 109.27 KB |
| Description | 2SD458 |
| Datasheet | D458-InchangeSemiconductor.pdf |
|
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Power Dissipation- : PC= 80W(Max)@TC=25℃ APPLICATIONS ·Designed for high power amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCER Collector-Emitter Voltage RBE= 50Ω VCEO Collector-Emitter Voltage 600 V 600 .DataSheet.co.kr V 400 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 5A ICM Collector Current-Peak 10 A IBB Base Current-Continuous 2A IBM Base Current-Peak PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature 3A 80 W 150 ℃ -65~150 ℃ isc Website：.iscsemi.cn Datasheet pdf - http://..net/ INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification 2SD458 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
D458 | N-Channel 200V MOSFET | VBsemi |
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