D458 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Power Dissipation- : PC= 80W(Max)@TC=25℃ APPLICATIONS ·Designed for high power amplifier and switching applications.
- Part: D458
- Manufacturer: Inchange Semiconductor
- Size: 109.27 KB
Similar Part Number
| Manufacturer | Part Number | Description |
|---|---|---|
VBsemi |
D458 | N-Channel 200V MOSFET |