VBsemi Electronics F3707
N-Channel MOSFET
| Part No. | F3707 |
|---|---|
| Datasheet | F3707 Download |
| Manufacturer | VBsemi Electronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● TrenchFET® power MOSFET● Package with low thermal resistance
● 100 % Rg and UIS tested D G GD S Top View
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Diode Conduction) a TC = 25 °C a TC = 125 °C Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH Maximum Power Dissipation b Operating Junction and Storage Temperature Range TC = 25 °C TC = 125 °C VDS VGS ID IS IDM IAS EAS PD TJ, Tstg S N-Channel MOSFET LIMIT 30 ± 20 70 50 70 250 33 54 71 23 -55 to +175 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) Notes a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR4 material). PCB Mount c SYMBOL RthJA RthJC LIMIT 50 2.1 UNIT °C/W F3707-VB SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TE...
