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F3709ZS-VB
F3709ZS-VB Datasheet
N-Channel 30-V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
30
0.0024 at VGS = 10 V
0.0027 at VGS = 4.5 V
ID (A)a, e 98 98
Qg (Typ) 82 nC
D2PAK (TO-263)
G D S
D
G S
N-Channel MOSFET
FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU
APPLICATIONS
• OR-ing • Server • DC/DC
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage Gate-Source Voltage
VDS
30
V
VGS
± 20
TC = 25 °C
98a, e
Continuous Drain Current (TJ = 175 °C)
TC = 70 °C TA = 25 °C
ID
98e 28.8b, c
A
TA = 70 °C
27b, c
Pulsed Drain Current
IDM
300
Avalanche Current Pulse Single Pulse Avalanche Energy
IAS
36
L = 0.1 mH
EAS
64.
F3709ZS Datasheet
