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FDD3N50NZ - Power MOSFET

Key Features

  • Low Gate Charge Qg Results in Simple Drive Requirement.
  • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Available RoHS.

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FDD3N50NZ Power MOSFET www.VBsemi.tw PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 1.