FDI3632 Description
FDI3632-VB FDI3632-VB Datasheet N-Channel 100-V (D-S) 175 °C MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0085 at VGS = 10 V 100 0.010 at VGS = 6 V ID (A) 100.
FDI3632 Key Features
- TrenchFET® Power MOSFET
- 175 °C Maximum Junction Temperature
- pliant to RoHS Directive 2002/95/EC