| Part Number | FDI3632 Datasheet |
|---|---|
| Manufacturer | VBsemi |
| Overview |
FDI3632-VB
FDI3632-VB Datasheet
N-Channel 100-V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0085 at VGS = 10 V 100
0.010 at VGS = 6 V
ID (A) 100 85
FEATURES • Trenc.
* TrenchFET® Power MOSFET * 175 °C Maximum Junction Temperature * Compliant to RoHS Directive 2002/95/EC TO-262 SS D G Top View D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 100 V. |
FDI3632 Datasheet and Specifications PDF
The FDI3632 is a N-Channel MOSFET.
| Part Number | FDI3632 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Overview |
FDB3632 / FDP3632 / FDI3632
April 2003
FDB3632 / FDP3632 / FDI3632
N-Channel PowerTrench® MOSFET 100V, 80A, 9mΩ
Features
• r DS(ON) = 7.5mΩ (Typ.), V GS = 10V, ID = 80A • Qg(tot) = 84nC (Typ.), VGS .
* r DS(ON) = 7.5mΩ (Typ.), V GS = 10V, ID = 80A * Qg(tot) = 84nC (Typ.), VGS = 10V * Low Miller Charge * Low QRR Body Diode * UIS Capability (Single Pulse and Repetitive Pulse) * Qualified to AEC Q101 Formerly developmental type 82784 Applications * DC/DC converters and Off-Line UPS * Distributed P. |