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HY3704P - N-Channel 40-V MOSFET

Key Features

  • Trench Power MOSFET.
  • 100 % Rg and UIS Tested.

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Datasheet Details

Part number HY3704P
Manufacturer VBsemi
File Size 345.23 KB
Description N-Channel 40-V MOSFET
Datasheet download datasheet HY3704P Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HY3704P-VB HY3704P-VB Datasheet N-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY VDS RDS(on) VGS = 10 V ID Configuration 40 V 2 m 180 A Single TO-220AB FEATURES • Trench Power MOSFET • 100 % Rg and UIS Tested APPLICATIONS • Synchronous Rectification • Power Supplies D www.VBsemi.com RoHS COMPLIANT G GDS Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 175 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current IDM Avalanche Current Pulse Single Pulse Avalanche Energy L = 0.