Full PDF Text Transcription for HY4903B (Reference)
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HY4903B. For precise diagrams, and layout, please refer to the original PDF.
HY4903B-VB HY4903B-VB Datasheet N-Channel 30 V (D-S) 175 °C MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Conf...
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S (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration 30 0.0014 0.0016 260 Single D2PAK (TO-263) G D S FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Trench Power MOSFET • Package with Low Thermal Resistance • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C TC = 125 °C ID Continuous Source Current (Diode Conduction)a IS Pulsed Drain Currentb IDM Single Pulse Avalanche Current Sin
HY4903B Datasheet
