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HY4903B6 - N-Channel Enhancement Mode MOSFET

General Description

30V/314A RDS(ON)= 1.3mΩ(typ.)@VGS = 10V RDS(ON)= 1.7mΩ(typ.)@VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) Applications Switch application Brushless Motor Drive DC-DC Electric Power Steering

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Datasheet Details

Part number HY4903B6
Manufacturer HOOYI
File Size 629.05 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HY4903B6 Datasheet

Full PDF Text Transcription for HY4903B6 (Reference)

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HY4903B6 N-Channel Enhancement Mode MOSFET Feature Description  30V/314A RDS(ON)= 1.3mΩ(typ.)@VGS = 10V RDS(ON)= 1.7mΩ(typ.)@VGS = 4.5V  100% Avalanche Tested  Reliabl...

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10V RDS(ON)= 1.7mΩ(typ.)@VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Lead Free and Green Devices Available (RoHS Compliant) Applications  Switch application  Brushless Motor Drive  DC-DC  Electric Power Steering Ordering and Marking Information Pin Description Pin7 Pin1 TO-263-6L Pin4 Pin1 Pin2,3,5,6,7 N-Channel MOSFET B6 HY4903 YYXXXJWW G Package Code B6:TO-263-6L Date Code YYXXX WW Assembly Material G:Lead Free Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS.

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