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I06N60T - N-Channel 650V Power MOSFET

Key Features

  • Low figure-of-merit (FOM) Ron x Qg.
  • Low input capacitance (Ciss).
  • Reduced switching and conduction losses.
  • Ultra low gate charge (Qg).
  • Avalanche energy rated (UIS).

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Datasheet Details

Part number I06N60T
Manufacturer VBsemi
File Size 286.54 KB
Description N-Channel 650V Power MOSFET
Datasheet download datasheet I06N60T Datasheet

Full PDF Text Transcription for I06N60T (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for I06N60T. For precise diagrams, and layout, please refer to the original PDF.

I06N60T-VB I06N60T-VB Datasheet /$IBOOFM7 %4 Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Con...

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(V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 0 VGS = 10 V 1.

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