IRFIZ24GP Datasheet | VBsemi

FEATURES - Isolated Package - High Voltage Isolation = 2.5 k VRMS (t = 60 s; f = 60 Hz) - Sink to Lead Creepage Distance = 4.8 mm - 175 °C Operating Temperature - Dynamic d V/dt Rating - Low Thermal Resistance - Lead (Pb)-free Available Ro HS PLIANT TO-220 FULLPAK GDS N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C Single Pulse Avalanche Energyb Maximum Power Dissipation Peak Diode Recovery d V/dtc TC = 25 °C EAS PD d V/dt Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature) for 10 s TJ, Tstg Mounting Torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 129 µH, RG = 25 Ω, IAS = 30 A (see fig. 12). c. ISD ≤ 52 A, d I/dt ≤ 250 A/µs, VDD ≤ VDS, TJ ≤ 175 °C. d. 1.6 mm from case. LIMIT 60 ± 20 45 30 220 0.32 100 52 4.5 - 55 to + 175 300d 10 1.1 UNIT V W/°C m J W V/ns °C lbf - in N-...