IRFIZ24GP Description
IRFIZ24GP N-Channel 60 V (D-S) MOSFET .VBsemi.tw PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 10 V 95 27 46 Single 0.027.
IRFIZ24GP Key Features
- Isolated Package
- High Voltage Isolation = 2.5 kVRMS (t = 60 s
- Sink to Lead Creepage Distance = 4.8 mm
- 175 °C Operating Temperature
- Dynamic dV/dt Rating
- Low Thermal Resistance
- Lead (Pb)-free Available