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IRFIZ24GP - N-Channel 60V MOSFET

Key Features

  • Isolated Package.
  • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz).
  • Sink to Lead Creepage Distance = 4.8 mm.
  • 175 °C Operating Temperature.
  • Dynamic dV/dt Rating.
  • Low Thermal Resistance.
  • Lead (Pb)-free Available RoHS.

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Datasheet Details

Part number IRFIZ24GP
Manufacturer VBsemi
File Size 1.87 MB
Description N-Channel 60V MOSFET
Datasheet download datasheet IRFIZ24GP Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IRFIZ24GP N-Channel 60 V (D-S) MOSFET www.VBsemi.tw PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 10 V 95 27 46 Single 0.027 FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.